NAND Flash is presently the most prominent solid-state memory technology. While SSD offer higher performance and other advantages over mechanical magnetic hard disk drives (HDD), their per-bit cost is much higher. Current methods to reduce cost however sharply degrade the tolerable number of erasures of a cell, thereby limiting product lifetime. The presented technology is an innovative memory management scheme that significantly boosts current write-capacity enhancing schemes with negligible capacity and performance overhead. This is done by managing “where” to write in addition to “what” to write. Specifically, RPU adds spatial consideration to any write-once memory coding.