Printed Electronics (PE) offers an attractive low cost alternative for the fabrication of electrical and optoelectronic devices which can be applied on large areas, and either on flexible or rigid surfaces.
While metallic inks have been developed for the bottom-up manufacturing technology of PE substrates and PCB’s, fabrication of electronic device is still limited because of the lack of suitable inorganic semiconducting (SC) material with controlled physical properties for PE fabrication.
We have developed new doped semiconductor nanocrystals suitable as a technology platform for a variety of printed electronics fabrication modalities and devices.
The use of such nanocrystals opens vast opportunities due to the flexibility in controlling the nanocrystal electrical and physical properties via tuning their size and composition through quantum confinement effects.
Our doped colloidal, inorganic nanocrystals based semiconductor material is prepared in a moderate temperature, low cost processes yet yields highly controlled electrical and optical properties of the semiconductor nanocrystals.
Inorganic nanocrystals manifest high thermal stability , band-gap tunabilty and long term stability of the doping properties of the semiconductor nanocrystals.
The semiconductor material can be designed to be n- or p-type in well controlled broad range of doping, thus overcoming the challenge of doping of strongly confined semiconductor nanocrystals.
These semiconductor nanocrystals materials are compatible with variety of printed electronics bottom-up deposition methods.
The new technology can be applied in printing device electronics on standard or flexible substrates.
Enables low cost fabrication by printing of electronic and optoelectronic devices such as transistors, solar cells and light emitting diodes.
Ability to fabricate nanocrystal-based electronic and optoelectronic devices.
The low temperatures needed for the nanocrystals materials processing may further benefit printed plastic electronics on flexible substrates which are incompatible with higher process temperatures.
PE devices are oriented to meet the fast growing need of mass production of simpler electronic devices in applications such as: wearable electronics, RF identification (RFID) of individual products and packages, electronics on transparent substrates, electronically controlled window covers and “smart windows”, consumer electronic papers, photodetectors, alternative energy source devices and more.
In practice PE is presently limited in use, mostly to printng metallic contacts and metallic interconnects, whereas printing of full devices is lagging far behind because of the lack of p and n doped inorganic semiconductor materials suitable for “printing” electronic devices.
Our inorganic doped colloidal semiconductor NCs material may fill this need, and the industrial implementation of our nanocrystals based inorganic semiconductor material may essentially remove an existing barrier in the process of broad application of PE technology for semiconductor material and devices.
Infrastructure investment in the proposed bottom-up fabrication process is substantially lower compared with top-down microelectronics fabrication. These will yield devices at much lower costs.
Our printable semiconductor nanocrystals will allow simple, low cost, large scale printing and bottom-up deposition of electronic devices on large area sheets, flexible substrates, transparent substrates, manufacturing electronic devices on continuous roll-to-roll substrates, and printing electronic devices on electronic papers, and others alike.
Researcher Information: http://chem.ch.huji.ac.il/~nano/ProfBanin.html